深圳市福田区辉信电子商行

-100V/-10A RDS(ON)= 187mΩ(typ.)@VGS = -10V RDS(ON)= 208mΩ(typ.)@VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant)

Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -100 V VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 175 °C TSTG Storage Temperature Range -55 to 175 °C IS Source Current-Continuous(Body Diode) Tc=25°C -10 A Mounted on Large Heat Sink IDM Pulsed Drain Current * Tc=25°C -40 A ID Continuous Drain Current Tc=25°C -10 A Tc=100°C -7 A PD Maximum Power Dissipation Tc=25°C 31.3 W Tc=100°C 15.6 W RJC Thermal Resistance, Junction-to-Case 4.8 °C/W RJA Thermal Resistance, Junction-to-Ambient 110 °C/W EAS SinglePulsed-Avalanche Energy ** L=0.5mH 85